Transistors
zPackaging specifications
Part No.
IMX9
Packaging type
Code
Basic ordering unit (pieces)
Taping
T110
3000
IMX9
zElectrical characteristic curves
2.0
Ta=25°C
1.6 2.0µA
1.8µA
1.6µA
1.4µA
1.2µA
1.2
1.0µA
0.8µA
0.8
0.6µA
0.4
0.4µA
0.2µA
0
IB=0
0
0.1
0.2
0.3
0.4
0.5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output
characteristics(Ι)
1000
1.8mA 2.0mA
1.6mA
1.4mA
800
1.2mA
1.0mA
600
0.8mA
0.6mA
400
0.4mA
0.2mA
200
Ta=25°C
Measured using
0
IB=0mA pulse current.
0
2
4
6
8
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics (ΙΙ)
1000
500
200
100
50
Ta=100°C
25°C
−25°C
VCE=3V
Measured using
pulse current.
20
10
5
2
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 Grounded emitter propagation
characteristics
10000
5000
2000
1000
500
200
100
50
Ta=25°C
Measured using
pulse current.
VCE=5V
3V
1V
20
10
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector
current (Ι)
10000
5000
2000
1000
500
200
100
50
VCE=3V
Measured using
pulse current.
Ta=100°C
25°C
−25°C
20
10
12
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current (ΙΙ)
2000
1000
500
Ta=25°C
Measured using
pulse current.
200
100
50
IC/IB=100
20 50
25
10 10
5
2
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current (Ι)