K08EEF5 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

K08EEF5

650V DuoPack IGBT and Diode High speed switching series fifth generation

Infineon Technologies 

IKA08N65F5

Highspeedswitchingseriesfifthgeneration

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Parameter

Symbol Conditions

StaticCharacteristic

Collector-emitter breakdown voltage V(BR)CES

Collector-emitter saturation voltage VCEsat

Diode forward voltage

VF

Gate-emitter threshold voltage

VGE(th)

Zero gate voltage collector current ICES

Gate-emitter leakage current

IGES

Transconductance

gfs

VGE=0V,IC=0.20mA

VGE=15.0V,IC=8.0A

Tvj=25°C

Tvj=125°C

Tvj=175°C

VGE=0V,IF=9.0A

Tvj=25°C

Tvj=125°C

Tvj=175°C

IC=0.08mA,VCE=VGE

VCE=650V,VGE=0V

Tvj=25°C

Tvj=175°C

VCE=0V,VGE=20V

VCE=20V,IC=8.0A

Value

Unit

min. typ. max.

650 -

-V

-

-

1.60 2.10

1.80 -

V

- 1.90 -

-

-

1.45 1.80

1.40 -

V

- 1.40 -

3.2 4.0 4.8 V

-

- 40.0 µA

-

- 4000.0

-

- 100 nA

- 17.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Parameter

DynamicCharacteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

Symbol Conditions

Cies

Coes

VCE=25V,VGE=0V,f=1MHz

Cres

QG

VCC=520V,IC=8.0A,

VGE=15V

Value

Unit

min. typ. max.

- 500 -

-

16

- pF

-

3

-

- 22.0 - nC

SwitchingCharacteristic,InductiveLoad

Parameter

Symbol Conditions

IGBTCharacteristic,atTvj=25°C

Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

Tvj=25°C,

VCC=400V,IC=4.0A,

VGE=0.0/15.0V,

RG(on)=48.0Ω,RG(off)=48.0Ω,

Lσ=30nH,Cσ=30pF

Lσ,CσfromFig.E

Energy losses include “tail” and

diode reverse recovery.

Value

Unit

min. typ. max.

-

10

- ns

-

5

- ns

- 116 - ns

-

20

- ns

- 0.07 - mJ

- 0.02 - mJ

- 0.09 - mJ

5

Rev.2.1,2015-05-05

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