K08F655(2012) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

K08F655
(Rev.:2012)

650V DuoPack IGBT and Diode High speed switching series fifth generation

Infineon Technologies 

IKA08N65F5

Highspeedswitchingseriesfifthgeneration

Maximumratings

Parameter

Collector-emitter voltage

DCcollectorcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

Pulsedcollectorcurrent,tplimitedbyTvjmax

TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C

Diodeforwardcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

Diodepulsedcurrent,tplimitedbyTvjmax

Gate-emitter voltage

TransientGate-emittervoltage(tp≤10µs,D<0.010)

PowerdissipationTC=25°C

PowerdissipationTC=100°C

Operating junction temperature

Storage temperature

Soldering temperature,

wave soldering 1.6 mm (0.063 in.) from case for 10s

Mounting torque, M3 screw

Maximum of mounting processes: 3

Symbol

VCE

IC

ICpuls

-

IF

IFpuls

VGE

Ptot

Tvj

Tstg

M

Value

Unit

650

V

10.8

A

6.8

24.0

A

24.0

A

12.3

A

7.3

24.0

A

±20

±30

V

31.2

15.6

W

-40...+175

°C

-55...+150

°C

260

°C

0.6

Nm

ThermalResistance

Parameter

Characteristic

IGBT thermal resistance,

junction - case

Diode thermal resistance,

junction - case

Thermal resistance

junction - ambient

Symbol Conditions

Rth(j-c)

Rth(j-c)

Rth(j-a)

Max.Value

Unit

4.80

K/W

5.60

K/W

65

K/W

4

Rev.1.1,2012-11-09

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