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K03H1202(2013) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
K03H1202 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IKA03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled
HE diode
C
Designed for:
- TV – Horizontal Line Deflection
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Integrated anti-parallel diode
- Eoff optimized for IC =3A
G
E
PG-TO220-3-31
(FullPAK)
PG-TO220-3-34
(FullPAK)
Qualified according to JEDEC2 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IKA03N120H2
IKA03N120H2
VCE
IC
1200V 3A
1200V 3A
Eoff
0.15mJ
0.15mJ
Tj
150C
150C
Marking
Package
K03H1202 PG-TO-220-3-31
K03H1202 PG-TO-220-3-34
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector peak current (VGE = 15V)
TC = 100C, f = 32kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Gate-emitter voltage
Power dissipation
TC = 25C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Isolation Voltage
Symbol
VCE
IC
ICpuls
-
IF
VGE
Ptot
Tj , Tstg
-
Visol
Value
Unit
1200
V
A
8.2
9
9
9.6
3.9
20
29
-40...+150
260
2500
V
W
C
Vrms
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.3 17.07.2013
 

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