K06T60 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

K06T60

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

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Thermal Resistance

Parameter

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

TrenchStop series

Symbol

RthJC

RthJCD

RthJA

Conditions

IKA06N60T

Max. Value

Unit

5.3

K/W

6.5

80

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Diode forward voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Transconductance

Integrated gate resistor

V(BR)CES

VCE(sat)

VF

VGE(th)

ICES

IGES

gfs

RGint

VGE=0V,

IC=0.25mA

VGE = 15V, IC=6A

Tj=25°C

Tj=175°C

VGE=0V, IF=6A

Tj=25°C

Tj=175°C

IC=0.18mA,

VCE=VGE

VCE=600V,VGE=0V

Tj=25°C

Tj=175°C

VCE=0V,VGE=20V

VCE=20V, IC=6A

min.

600

-

-

-

-

4.1

-

-

-

-

Value

typ.

-

1.5

1.8

1.6

1.6

4.6

-

-

-

3.6

none

Unit

max.

-V

2.05

2.05

-

5.7

µA

40

700

100 nA

-S

Ω

Power Semiconductors

2

Rev. 2 Oct-04

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