DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

G01H1202(2007) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
G01H1202
(Rev.:2007)
Infineon
Infineon Technologies Infineon
G01H1202 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IGB01N120H2
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient1)
Symbol
Conditions
RthJC
RthJA
PG-TO-220-3-1
Max. Value
Unit
4.5
K/W
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V(BR)CES
VCE(sat)
VGE=0V, IC=300µA
VGE = 15V, IC=1A
Tj=25°C
Tj=150°C
VGE = 10V, IC=1A,
Tj=25°C
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
VGE(th)
ICES
IGES
gfs
IC=30µA,VCE=VGE
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=1A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=1A
VGE=15V
min.
1200
-
-
-
2.1
-
-
-
-
-
-
-
-
-
Value
Unit
Typ. max.
-
-V
2.2
2.8
2.5
-
2.4
-
3
3.9
µA
-
20
-
80
-
40 nA
0.75
-S
91.6
- pF
9.8
-
3.4
-
8.6
- nC
7
- nH
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
Power Semiconductors
2
Rev. 2.4 Oct. 07
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]