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G15T120 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
G15T120
Infineon
Infineon Technologies Infineon
G15T120 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TrenchStop® Series
IGW15T120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJA
Conditions
Max. Value
Unit
1.1
K/W
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V, IC=0.5mA
VGE = 15V, IC=15A
Tj=25°C
Tj=125°C
Tj=150°C
IC=0.6mA,VCE=VGE
VCE=1200V,
VGE=0V
Tj=25°C
Tj=150°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=15A
min.
1200
-
-
-
5.0
-
-
-
-
Value
typ.
-
1.7
2.0
2.2
5.8
-
-
-
10
none
Unit
max.
-V
2.2
-
-
6.5
mA
0.2
2.0
100 nA
-S
Ω
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
-
Output capacitance
Coss
VGE=0V,
-
Reverse transfer capacitance
Crss
f=1MHz
-
Gate charge
QGate
VCC=960V, IC=15A
-
VGE=15V
Internal emitter inductance
LE
-
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VGE=15V,tSC≤10µs
-
VCC = 600V,
Tj = 25°C
1100
100
50
85
13
90
- pF
-
-
- nC
- nH
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.5 Nov. 09
 

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