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IAM-81008-TR1 View Datasheet(PDF) - HP => Agilent Technologies

Part Name
Description
Manufacturer
IAM-81008-TR1 Datasheet PDF : 4 Pages
1 2 3 4
IAM-81008 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Voltage
Power Dissipation2,3
RF Input Power
LO Input Power
Junction Temperature
Storage Temperature
10 V
300 mW
+14 dBm
+14 dBm
150°C
–65 to 150°C
Thermal Resistance:
θjc = 80°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 4.4 mW/°C for TC > 82°C.
IAM-81008 Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
IAM-81008-TR1
1000
7"
For more information, see “Tape and Reel Packaging for Semmiconductor Devices”.
IAM-81008 Electrical Specifications[1], TA = 25°C
Symbol Parameters and Test Conditions: Vcc = 5 V, ZO = 50 , LO =–5 dBm, RF = –20 dBm Units Min. Typ. Max.
GC
Conversion Gain
RF = 2 GHz, LO = 1.75 GHz dB 6.0
F3 dBRF RF Bandwidth (GC 3 dB Down)
IF = 250 MHz
GHz
F3 dB IF IF Bandwidth (GC 3 dB Down)
LO = 2 GHz
GHz
P1 dB IF Output Power at 1 dB Gain Compression RF = 2 GHz, LO = 1.75 GHz dBm
IP3
IF Output Third Order Intercept Point
RF = 2 GHz, LO = 1.75 GHz dBm
NF
SSB Noise Figure
RF = 2 GHz, LO = 1.75 GHz dB
8.5 10
3.5
0.6
–6
3
17
VSWR
RF Port VSWR
LO Port VSWR
f = 0.05 to 3.5 GHz
f = 0.05 to 3.5 GHz
1.5:1
2.0:1
IF Port VSWR
RFif
RF Feedthrough at IF Port
LOif
LO Leakage at IF Port
LOrf
LO Leakage at RF Port
ICC
Supply Current
f < 1 GHz
1.5:1
RF = 2 GHz, LO = 1.75 GHz dBc
–25
LO = 1.75 GHz
dBm
–25
LO = 1.75 GHz
dBm
–30
mA 10
13 16
Note:
1. The recommended operating voltage range for this device is 4 to 8 V. Typical performance as a function of voltage is on
the following page.
7-120
 

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