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HUFA75637P3T View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
HUFA75637P3T Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Data Sheet
HUFA75637P3, HUFA75637S3S
December 2001
44A, 100V, 0.030 Ohm, N-Channel,
UltraFETĀ® Power MOSFET
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUFA75637P3
GATE
SOURCE
HUFA75637S3S
Symbol
D
G
S
Features
ā€¢ Ultra Low On-Resistance
- rDS(ON) = 0.030ā„¦, VGS = 10V
ā€¢ Simulation Models
- Temperature Compensated PSPICEĀ® and SABERā„¢
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
ā€¢ Peak Current vs Pulse Width Curve
ā€¢ UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75637P3
TO-220AB
75637P
HUFA75637S3S
TO-263AB
75637S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA75637S3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUFA75637P3, HUFA75637S3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
100
V
Drain to Gate Voltage (RGS = 20kā„¦) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
100
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Ā±20
V
Drain Current
Continuous
Continuous
(TC
(TC
=
=
12050oCoC, ,VVGGSS==1100VV) )(F(Figiguurere22) )
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ID
ID
44
31
A
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Figures 6, 14, 15
Power Dissipation . . .
Derate Above 25oC
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PD
...
155
1.03
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260
oC
NOTE:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in ā€œAbsolute Maximum Ratingsā€ may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
Ā©2001 Fairchild Semiconductor Corporation
HUFA75637P3, HUFA75637S3S Rev. B
 

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