Integrated circuits, Transistor, Semiconductors Free Datasheet Search and Download Site


GLT61132-50P View Datasheet(PDF) - G-Link Technology

Part NameGLT61132-50P G-Link
G-Link Technology  
Description256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT


GLT61132-50P Datasheet PDF : 17 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
G-LINK
AC Characteristics
GLT440L16
256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug. 2000 (Rev.1.1)
35
Parameter
Symbol Min. Max.
Write Command to CAS Lead Time
Data Set-Up Time
tCWL
tDS
Data Hold Time
tDH
Data Hold Time Referenced to RAS
RAS to WE Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
RAS to CAS Precharge Time
Access Time from CAS Precharge
EDO Page Mode Cycle Time
tDHR
tRWD
tCWD
tAWD
tRPC
tCPA
tPC
EDO Page Mode Read-Modify-write Cycle Time tPRWC
CAS Precharge Time (EDO Page Mode)
RAS Pulse Width (EDO Page Mode Only)
Access Time from OE
OE to Data Delay Time
OE to Output High-Z
OE Command Hold Time
Data Output Hold after CAS Low
RAS to Output High-Z
WE to Output High-Z
OE to CAS Hold Time
CAS Hold Time to OE
OE Precharge Time
CAS Set-Up Time for CAS –before- RAS Cycle
CAS Hold Time for CAS –before- RAS Cycle
Transition Time
tCP
tRASP
tOEA
tOED
tOEZ
tOEH
tDOH
tREZ
tWEZ
tOCH
tCHO
tOEP
tCSR
tCHR
tT
Refresh Period
tREF
8
0
5
25
46
23
29
0
20
14
45
4
35 100k
11
5
3
8
5
3
3
8
3 10
8
8
8
8
8
2 50
8
40
Min. Max.
12
0
8
36
54
24
32
0
22
15
50
5
40 100k
12
8
3
8
7
3
3
8
3 10
8
8
8
10
10
2 50
8
50
Min. Max.
13
0
9
46
64
25
37
0
30
20
59
8
50 100k
13
8
3
8
7
5
3
8
3 12
8
8
8
10
10
2 50
8
Unit Notes
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-7-
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E, RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
Direct download click here
HOME 'GLT61132-50P' Search

Description :
The GLT440L16 is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The GLT44016 offers Fast Page mode with Extended Data Output, and has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. The GLT440L16 has symmetric address and accepts 512-cycle refresh in 8ms interval All inputs are TTL compatible. EDO Page Mode operation allows random access up to 512 x 16 bits within a page, with cycle time as short as 14ns.
The GLT440L16 is best suited for graphics, and DSP applications requiring high performance memories.

Features :
* 262,144 words by 16 bits organization.
* Fast access time and cycle time.
* Dual CAS Input.
* Low power dissipation.
* Read-Modify-Write, RAS-Only Refresh, CAS -Before-RAS Refresh, Hidden Refresh and Test Mode Capability.
* 512 refresh cycles per 8ms.
* Available in 40-Pin 400 mil SOJ and 40/44 Pin TSOP(II)
* Single +3.3V±10% Power Supply.
* All inputs and Outputs are TTL compatible.
* Extended Data-Out(EDO) Page Mode operation.

 

Share Link : 

한국어     日本語     русский     简体中文     español
@ 2015 - 2018  [ Home  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]