GLT611L04-30Q View Datasheet(PDF) - G-Link Technology
Part Name
Description
Manufacturer
GLT611L04-30Q Datasheet PDF : 17 Pages
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G-LINK
GLT440L16
256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug. 2000 (Rev.1.1)
TA = 0°C to 70°C , VCC = 3.3 V ± 10% VIH/VIL = 2.0/0.8V , VOH/VOL = 2.0/0.8V
An initial pause of 100 µs and 8 CAS -before- RAS or RAS -only refresh cycles are required after power-up.
35
40
50
Parameter
Symbol Min. Max. Min. Max. Min. Max. Unit Notes
Read or Write Cycle Time
tRC
Read Modify write Cycle Time
tRWC
RAS Precharge Time
tRP
RAS Pulse Width
tRAS
Access Time from RAS
tRAC
Access Time from CAS
tCAC
Access Time from Column Address
tAA
CAS to Output Low-Z
CAS to Output High-Z
RAS Hold Time
RAS Hold Time Referenced to OE
CAS Hold Time
CAS Pulse width
RAS to CAS Delay Time
RAS to Column Address Delay Time
CAS to RAS Precharge Time
Row Address Set-Up Time
tCLZ
tCEZ
tRSH
tROH
tCSH
tCAS
tRCD
tRAD
tCRP
tASR
Row Address Hold Time
tRAH
Column Address Set-Up Time
tASC
Column Address Hold Time
tCAH
Column Address to RAS Lead Time
tRAL
Column Address Hold Time Referenced to RAS tAR
Read Command Set-Up Time
tRCS
Read Command Hold Time Referenced to CAS
Read Command Hold Time Referenced to RAS
Write Command Set-Up Time
tRCH
tRRH
tWCS
Write Command Hold Time
tWCH
Write Command Pulse Width
tWP
Write Command to RAS Lead Time
tRWL
70
75
90
ns
90
93
109
ns
25
25
30
ns
35 75k 40 100k 50 100k ns
35
40
50 ns
11
12
13 ns
18
20
25 ns
0
0
0
ns
3
8
3
8
3
8
ns
10
12
14
ns
7
8
9
ns
34
34
45
ns
6
6
8
ns
13 24 18 28 19 37 ns
10 17 13 20 14 25 ns
5
5
5
ns
0
0
0
ns
6
8
9
ns
0
0
0
ns
5
6
7
ns
18
20
25
ns
25
34
44
ns
0
0
0
ns
0
0
0
ns
0
0
0
ns
0
0
0
ns
5
6
7
ns
5
6
7
ns
10
12
13
ns
1,2,3
1,5,10
1,5,6
7
4
4
8,9
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-6-
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E, RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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