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GLT61132-40TQ View Datasheet(PDF) - G-Link Technology

Part NameGLT61132-40TQ G-Link
G-Link Technology  
Description256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
GLT61132-40TQ Datasheet PDF : 17 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
G-LINK
GLT440L16
256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Aug. 2000 (Rev.1.1)
Absolute Maximum Ratings*
Capacitance*
TA=25°C, VCC=3.3V±10%, VSS=0V
Operating Temperature, TA (ambient)
Symbol
Parameter
.....................................-10°C to +70°C
Storage Temperature(plastic)....-55°C to +150°C CIN1 Address Input
Typ Max. Unit
3 4 pF
Voltage Relative to VSS............….-1.0V to + 4.6V
Short Circuit Output Current......................50mA
CIN2
RAS , LCAS , UCAS , WE , OE
4
Power Dissipation......................................1.0W COUT Data Input/Output
5
5 pF
7 pF
*Note:Operation above Absolute Maximum Ratings can *Note: Capacitance is sampled and not 100% tested
abversely affect device reliability.
Electrical Specifications
l CAS means UCAS and LCAS .
l All voltages are referenced to GND.
l After power up, wait more than 100µs and then, execute eight CAS -before-RAS or RAS -only
refresh cycles as dummy cycles to initialize internal circuit.
Block Diagram :
OE
WE
UCAS
LCAS
RAS
RAS CLOCK
GENERATOR
CAS CLOCK
GENERATOR
WE CLOCK
GENERATOR
OE CLOCK
GENERATOR
VCC
VSS
A0
A1
.
A7
.
A8
REFRESH
COUNTER
9
Data I/O BUS
COLUMN DECODERS
SENSE AMPLIFIERS
Y0 - Y8
512 × 16
ADDRESS BUFFERS
AND PREDECODERS
X0 - x8
ROW
DECODERS
512
MEMORY
ARRAY
I/O
BUFFER
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
I/O16
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-3-
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E, RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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