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AD261AND-4(1997) View Datasheet(PDF) - Analog Devices

Part Name
Description
Manufacturer
AD261AND-4
(Rev.:1997)
ADI
Analog Devices ADI
AD261AND-4 Datasheet PDF : 6 Pages
1 2 3 4 5 6
AD261–SPECIFICATIONS (Typical at TA = +25؇C, +5 V dcSYS, +5 V dcFLD, tRR = 50 ns max unless otherwise noted)
Parameter
Conditions
Min Typ Max
Units
INPUT CHARACTERISTICS
Threshold Voltage
Positive Transition (VT+)
Negative Transition (VT–)
Hysteresis Voltage (VH)
Input Capacitance (CIN)
Input Bias Current (IIN)
+5 V dcSYS = 4.5 V
+5 V dcSYS = 5.5 V
+5 V dcSYS = 4.5 V
+5 V dcSYS = 5.5 V
+5 V dcSYS = 4.5 V
+5 V dcSYS = 5.5 V
Per Input
2.0 2.7
3.15
V
3.0 3.2
4.2
V
0.9 1.8
2.2
V
1.2 2.2
3.0
V
0.4 0.9
1.4
V
0.5 1.0
1.5
V
5
pF
0.5
µA
OUTPUT CHARACTERISTICS
Output Voltage1
High Level (VOH)
+5 V dcSYS = 4.5 V, |IO| = 0.02 mA
4.4
V
+5 V dcSYS = 4.5 V, |IO| = 4 mA
3.7
V
Low Level (VOL)
Output Three-State Leakage Current
+5 V dcSYS = 4.5 V, |IO| = 0.02 mA
+5 V dcSYS = 4.5 V, |IO| = 4 mA
ENABLESYS/FLD @ Logic Low/High Level Respectively
0.1
V
0.4
V
0.5
µA
DYNAMIC RESPONSE 1 (Refer to Figure 2)
Max Logic Signal Frequency (fMIN)
Waveform Edge Symmetry Error (tERROR)
Logic Edge Propagation Delay (tPHL, tPLH)
Minimum Pulsewidth (tPWMIN)
Max Output Update Delay on Fault or After
Power-Up Reset Interval (30 µs)2
50% Duty Cycle, +5 V dcSYS = 5 V
tPHL vs. tPLH
20
±1
14
25
25
12
MHz
ns
ns
ns
µs
ISOLATION BARRIER RATING3
Operating Isolation Voltage (VCMV)
Isolation Rating Test Voltage (VCMV TEST)4
Transient Immunity (VTRANSIENT)
Isolation Mode Capacitance (CISO)
Capacitive Leakage Current (ILEAD)
AD261A
AD261B
AD261A
AD261B
Total Capacitance, All Lines
240 V rms @ 60 Hz
1750
3500
10,000
9
375
1250
15
2
V rms
V rms
V rms
V rms
V/µs
pF
µA rms
POWER SUPPLY
Supply Voltage (+5 V dcSYS and +5 V dcFLD)
Power Dissipation Capacitance
Quiescent Supply Current
Supply Current
Rated Performance
Operating
Effective, per Input, Either Side
Effective per Output, Either Side—No Load
Each, +5 V dcSYS & FLD
All Lines @ 10 MHz (Sum of +5 V dcSYS & FLD)
4.5
5.5
V dc
4.0
5.75
V dc
8
pF
28
pF
4
mA
18
mA
TEMPERATURE RANGE
Rated Performance (TA)5
Storage (TSTG)
–25
+85
°C
–40
+85
°C
NOTES
1For best performance, bypass +5 V dc supplies to com., at or near the device (0.01 µF). +5 V dc supplies are also internally bypassed with 0.05 µF.
2As the supply voltage is applied to either side of the AD261, the internal circuitry will go into a power-up reset mode (all lines disabled) for about 30 µs after the point
where +5 V dcSYS & FLD passes above 3.3 V.
3“Operating” isolation voltage is derived from the Isolation Test Voltage in accordance with such methods as found in VDE-0883 wherein a device will be “hi-pot”
tested at twice the operating voltage, plus one thousand volts. Partial discharge testing, with an acceptance threshold of 80 pC of discharge may be considered the
same as a hi-pot test (but nondestructive).
4Partial Discharge at 80 pC THLD.
5Supply Current will increase slightly, but otherwise the unit will function within specification to –40°C.
Specifications are subject to change without notice.
–2–
REV. 0
 

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