H327 View Datasheet(PDF) - Shantou Huashan Electronic Devices
Part Name
Description
Manufacturer
H327 Datasheet PDF : 2 Pages
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Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H327
█ SWITCHING AND AMPLFIER APPLICATIONS
Suitable for AF-Driver stages and low power output stages
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………625mW
VCBO——Collector-Base Voltage………………………………-50V
VCEO——Collector-Emitter Voltage……………………………-45V
VEBO——Emitter-Base Voltage………………………………-5V
IC——Collector Current……………………………………-500mA
TO-92
1―Collector，C
2―Base，B
3―Emitter，E
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE（1）
HFE（2）
VCE(sat)
VBE(ON)
fT
Ccbo
Characteristics
Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
-50
V
IC=-100μA, IE=0
Collector-Emitter Breakdown Voltage
-45
V
IC=-10mA, IB=0
Emitter-Base Breakdown Voltage
-5
V
IE=-100μA，IC=0
Collector Cut-off Current
-100 nA
VCB=-20V, IE=0
Emitter-Base Cut-off Current
-10 μA
VEB=-5V, IC=0
DC Current Gain
100
600
VCE=-1V, IC=-100mA
40
VCE=-1V, IC=-500mA
Collector- Emitter Saturation Voltage
-0.7 V IC=-500mA, IB=-50mA
Base-Emitter On Voltage
-1.2 V VCE=-1V, IC=-500mA
Current Gain-Bandwidth Product
100
MHz VCE=-5V, IC=-10mA
Collector-Base Capacitance
8
pF VCB=-10V, IE=0
F=1MHz
█ hFE Classification
16
100—250
25
160—400
40
250—600
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