H11AA814SD View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
H11AA814SD Datasheet PDF : 9 Pages
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4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
DC Characteristic
Test Conditions
Symbol
Device
Min Typ* Max Unit
(IF = ±1 mA, VCE = 5 V) (note 1)
H11AA814
20
300 %
(IF = ±1 mA, VCE = 5 V) (note 1)
H11AA814A
50
150 %
H11A617A
40
80 %
(IF = 10 mA, VCE = 5 V) (note 1)
H11A617B
63
H11A617C
100
125 %
200 %
H11A617D
160
320 %
Current Transfer
Ratio
(IF = 5 mA, VCE = 5 V) (note 1)
CTR
H11A817
50
H11A817A
80
H11A817B
130
H11A817C
200
600 %
160 %
260 %
400 %
H11A817D
300
600 %
H11A617A
13
%
(IF = 1 mA, VCE = 5 V) (note 1)
H11A617B
22
%
H11A617C
34
%
H11A617D
56
%
Collector-Emitter
Saturation Voltage
(IC = 1 mA, IF = ±20 mA)
(IC = 2.5 mA, IF = 10 mA)
(IC = 1 mA, IF = 20 mA)
VCE (SAT)
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
0.2
0.4 V
0.2
AC Characteristic
Rise Time
(IC = 2 mA, VCE = 2 V, RL = 100V) (note 2)
tr
ALL
2.4 18 µs
Fall Time
(IC = 2 mA, VCE = 2 V, RL = 100V) (note 2)
tf
ALL
2.4 18 µs
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage (note 3)
Isolation Resistance
Isolation Capacitance
*Typical values at TA = 25°C.
Test Conditions
f = 60Hz, t = 1 min
(VI-O = 500 VDC)
(VI-O = 0, f = 1 MHz)
Symbol
VISO
RISO
CISO
NOTES
1. Current Transfer Ratio (CTR) = IC/IF x 100%.
2. For test circuit setup and waveforms, refer to Figure 8.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
Min
5300
1011
Typ*
0.5
Max
Units
Vac(rms)
Ω
pf
© 2003 Fairchild Semiconductor Corporation
Page 3 of 9
4/24/03
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