H11A817SD View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
H11A817SD Datasheet PDF : 9 Pages
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4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation (-55°C to 50 °C)
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation (25°C ambient)
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation (25°C ambient)
Derate above 25°C
Symbol
TSTG
TOPR
TSOL
PD
IF
VR
IF(pk)
PD
VCEO
VECO
IC
PD
Device
Value
Units
All
-55 to +150
°C
All
-55 to +100
°C
All
260 for 10 sec
°C
All
200
mW
All
H11A617A/B/C/D
H11A817/A/B/C/D
All
All
50
mA
6
5
V
1.0
A
100
mW
1.33
mW/°C
All
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
All
All
70
V
6
7
V
6
50
mA
150
mW
2.0
mW/°C
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions Symbol
Device
Min Typ* Max Unit
EMITTER
(IF = 60 mA)
H11A617A/B/C/D
1.35 1.65
Input Forward Voltage
(IF = 20 mA) VF
(IF = ±20 mA)
H11A817/A/B/C/D
H11AA814/A
1.2 1.5 V
1.2 1.5
Reverse Leakage Current
(VR = 6.0 V)
(VR = 5.0 V)
IR
H11A617A/B/C/D
H11A817/A/B/C/D
.001 10 µA
DETECTOR
Collector-Emitter Breakdown
Voltage
(IC = 1.0 mA, IF = 0) BVCEO
ALL
70 100
V
H11AA814/A
6
Emitter-Collector Breakdown
Voltage
(IE = 100 µA, IF = 0) BVECO
H11A617A/B/C/D
7 10
V
H11A817/A/B/C/D
6
Collector-Emitter Dark Current
(VCE = 10V, IF = 0)
ICEO
H11AA814/A, H11A817/A/B/C/D,
H11A617C/D
H11A617A/B
100
1
nA
50
Collector-Emitter Capacitance (VCE = 0 V, f = 1 MHz) CCE
ALL
8
pF
*Typical values at TA = 25°C.
© 2003 Fairchild Semiconductor Corporation
Page 2 of 9
4/24/03
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