H11AA3-MSV View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
H11AA3-MSV Datasheet PDF : 9 Pages
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AC INPUT/PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA1-M
H11AA2-M
H11AA3-M
H11AA4-M
ABSOLUTE MAXIMUM RATINGS (TA =25°C Unless otherwise specified)
Parameter
Symbol
Device
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation
Derate Linearly From 25°C
EMITTER
Continuous Forward Current
Forward Current – Peak (1 µs pulse, 300 pps)
LED Power Dissipation
Derate Linearly From 25°C
DETECTOR
Continuous Collector Current
Detector Power Dissipation
Derate linearity from 25°C
TSTG
All
TOPR
All
TSOL
All
PD
All
IF
All
IF(pk)
All
PD
All
IC
All
PD
All
Value
-40 to +150
-40 to +100
260 for 10 sec
250
2.94
60
±1.0
120
1.41
50
150
1.76
Units
°C
°C
°C
mW
mW/°C
mA
A
mW
mW/°C
mA
mW
mW/°C
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions Symbol
Device
Min
EMITTER
Input Forward Voltage
IF = ±10 mA
VF
All
Capacitance
VF = 0 V, f = 1.0 MHz
CJ
All
DETECTOR
Breakdown Voltage
Collector to Emitter
IC = 1.0 mA, IF = 0
BVCEO
All
30
Collector to Base
IC = 100 µA, IF = 0
BVCBO
All
70
Emitter to Base
IE = 100 µA, IF = 0
BVEBO
All
5
Emitter to Collector
IE = 100 µA, IF = 0
BVECO
All
7
Leakage Current
Collector to Emitter
VCE = 10 V, IF = 0
ICEO
H11AA1,3,4(-M)
H11AA2-M
Capacitance
Collector to Emitter
VCE = 0, f = 1 MHz
CCE
All
Collector to Base
VCB = 0, f = 1 MHz
CCB
All
Emitter to Base
VEB = 0, f = 1 MHz
CEB
All
*Typical values at TA = 25°C
Typ*
1.17
80
100
120
10
10
1
1
10
80
15
© 2004 Fairchild Semiconductor Corporation
Page 2 of 9
Max
Unit
1.5
V
pF
V
V
V
V
50
nA
200
pF
pF
pF
1/9/04
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