H11AA3S View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
H11AA3S Datasheet PDF : 8 Pages
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Electrical Characteristics (TA = 25°C Unless otherwise specified.)
Individual Component Characteristics
Parameter
Test Conditions Symbol Device Min
EMITTER
Input Forward Voltage
Capacitance
DETECTOR
IF = ±10 mA
VF
All
VF = 0 V, f = 1.0 MHz
CJ
All
Breakdown Voltage
Collector to Emitter
IC = 1.0 mA, IF = 0
BV CEO
All
30
Collector to Base
Emitter to Base
Emitter to Collector
Leakage Current
Collector to Emitter
IC = 100 µA, IF = 0
IE = 100 µA, IF = 0
IE = 100 µA, IF = 0
VCE = 10 V, IF = 0
BV CBO
All
70
BV EBO
All
5
BV ECO
All
7
ICEO H11AA1,3,4
H11AA2
Capacitance
Collector to Emitter
VCE = 0, f = 1 MHz
C CE
All
Collector to Base
Emitter to Base
VCE = 0, f = 1 MHz
C CB
All
VCE = 0, f = 1 MHz
C EB
All
Typ
1.2
80
10
80
15
Max Unit
1.5
V
pF
V
V
V
V
50
nA
200
pF
pF
pF
Transfer Characteristics (TA = 25°C Unless otherwise specified.)
Characteristics
Test Conditions
Symbol Device
Current Transfer Ratio,
Collector to Emitter
IF = ±10 mA, VCE = 10 V
CTR CE
H11AA4
H11AA3
H11AA1
H11AA2
Current Transfer Ratio, Symmetry IF = ±10 mA, VCE = 10 V (Figure.8)
All
Saturation Voltage
Collector to Emitter
IF = ±10 mA, ICE = 0.5 mA
V CE(SAT)
All
Min
100
50
20
10
.33
Typ
Max Units
%
3.0
.40
V
Isolation Characteristics
Characteristic
Package Capacitance input/output
Isolation Voltage
Isolation Resistance
Test Conditions
VI-O = 0, f = 1 MHz
f = 60 Hz, t = 1 min.
VI-O = 500 VDC
Symbol
C I-O
V ISO
R ISO
Min
5300
1011
Typ Max Units
0.7
pF
VAC(RMS)
Ω
2
H11AA1, H11AA3, H11AA2, H11AA4 Rev. 1.0.0
www.fairchildsemi.com
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