H11AA2M View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
H11AA2M Datasheet PDF : 10 Pages
| |||
Electrical Characteristics (TA = 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
EMITTER
VF Input Forward Voltage IF = ±10mA
All
CJ Capacitance
VF = 0 V, f = 1.0MHz
All
DETECTOR
BVCEO Breakdown Voltage
Collector to Emitter
IC = 1.0mA, IF = 0
All
30
BVCBO
BVEBO
BVECO
ICEO
Collector to Base
Emitter to Base
Emitter to Collector
Leakage Current
Collector to Emitter
IC = 100µA, IF = 0
IE = 100µA, IF = 0
IE = 100µA, IF = 0
VCE = 10 V, IF = 0
All
70
All
5
All
7
H11AA1M
H11AA3M
H11AA4M
H11AA2M
CCE Capacitance Collector VCE = 0, f = 1MHz
All
to Emitter
CCB Collector to Base
VCB = 0, f = 1MHz
All
CEB Emitter to Base
VEB = 0, f = 1MHz
All
*Typical values at TA = 25°C
Typ.*
1.17
80
100
120
10
10
1
1
10
80
15
Max. Unit
1.5
V
pF
V
V
V
V
50
nA
200
pF
pF
pF
Transfer Characteristics
Symbol Characteristics
CTRCE Current Transfer Ratio,
Collector to Emitter
VCE(SAT)
Current Transfer Ratio,
Symmetry
Saturation Voltage,
Collector to Emitter
Test Conditions
IF = ±10mA, VCE = 10V
IF = ±10mA, VCE = 10V
(Figure 11)
IF = ±10mA, ICE = 0.5mA
Device
H11AA4M
H11AA3M
H11AA1M
H11AA2M
All
All
Min.
100
50
20
10
.33
Typ.* Max. Units
%
3.0
.40
V
Isolation Characteristics
Symbol
Characteristic
CI-O
Package Capacitance
Input/Output
VISO
RISO
Isolation Voltage
Isolation Resistance
*Typical values at TA = 25°C
Test Conditions
VI-O = 0, f = 1MHz
f = 60Hz, t = 1 sec.
VI-O = 500 VDC
Min.
7500
1011
Typ.*
0.7
Max.
Units
pF
Vac(pk)
Ω
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
3
www.fairchildsemi.com
|
|
Share Link: 