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Part Name
Description
G1126-02 View Datasheet(PDF) - Hamamatsu Photonics
Part Name
Description
Manufacturer
G1126-02
GaAsP photodiode
Hamamatsu Photonics
G1126-02 Datasheet PDF : 4 Pages
1
2
3
4
GaAsP photodiode
G1126-02, G1127-02, G2119
s
Spectral response
0.3
(Typ. Ta=25
˚
C)
s
Photo sensitivity temperature characteristic
+1.5
(Typ.)
0.25
+1.0
0.2
0.15
+0.5
0.1
0
0.05
0
190
400
600
WAVELENGTH (nm)
800
KGPDB0034EA
-0.5
190
400
600
WAVELENGTH (nm)
800
KGPDB0035EA
s
Rise time vs. load resistance
10
ms
1
ms
(Typ. Ta=25 ˚C, V
R
=0 V)
G2119
G1127-02
100
µs
10
µs
G1126-02
1
µs
s
Dark current vs. reverse voltage
1
nA
(Typ. Ta=25
˚
C)
100
pA
10
pA
1
pA
G2119
G1127-02
G1126-02
100
ns
10
2
10
3
10
4
10
5
LOAD RESISTANCE (
Ω
)
10
6
KGPDB0036EA
100
fA
0.001
0.01
0.1
1
REVERSE VOLTAGE (V)
10
KGPDB0037EA
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