Electrical Characteristics
VDD=15V, TA=25°C, unless otherwise specified.
Symbol
Parameter
Conditions
Min. Typ.
INTERNAL MOSFET SECTION
DCYMAX Maximum Duty Cycle
75
BVDSS
Drain-Source Breakdown
Voltage
ID=250μA, VGS=0V
600
∆BVDSS /∆TJ
Breakdown-Voltage
Temperature Coefficient
ID=250μA, Referenced
to 25°C
0.6
IS
Maximum Continuous Drain-
Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source
Diode Forward Current
RDS(ON)
Static Drain-Source On-
Resistance
ID=0.5A, VGS=10V
9.3
VDS=600V, VGS=0V
TC=25°C
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
TC=100°C
tD-ON
Turn-On Delay Time
VDS=300V, ID=1.1A
RG=25Ω(3,4)
7
tr
Rise Time
21
tD-OFF
Turn-off Delay Time
13
tf
Fall Time
27
CISS
Input Capacitance
VGS=0V, VDS=25V
fS=1MHz
130
COSS
Output Capacitance
19
OVER-TEMPERATURE-PROTECTION SECTION
TOTP
Threshold Temperature for
OTP(5)
140
Notes:
3. Pulse Test: Pulse width ≦ 300μs, Duty cycle ≦ 2%.
4. Essentially independent of operating temperature.
5. When the OTP is activated, the power system enters latch mode and output is disabled.
Max.
1
4
11.5
1
10
24
52
36
64
170
25
Units
%
V
V/°C
A
A
Ω
μA
μA
ns
ns
ns
ns
pF
pF
°C
© 2008 Fairchild Semiconductor Corporation
FSEZ1216B Rev. 1.0.0
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