Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
103
Operation in This Area
is Limited by R DS(on)
102
10 µs
100 µs
1 ms
10 ms
101
DC 100 ms
100
10-1
100
※ Notes :
1. TC = 25 oC
2.
3.
TSJin=gl1e7P5uolCse
101
102
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP45N15V2
50
45
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
©2004 Fairchild Semiconductor Corporation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 22.5 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
103
102
101
100
10-1
100
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
1 ms
10 ms
100 ms
DC
※ Notes :
1. TC = 25 oC
2.
3.
TSJin=gl1e7P5uolCse
101
102
VDS, Drain-Source Voltage [V]
Figure 9-2. Maximum Safe Operating Area
for FQPF45N15V2
Rev. A, October 2004