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FQP45N15V2 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FQP45N15V2
Fairchild
Fairchild Semiconductor Fairchild
FQP45N15V2 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
FQP45N15V2/FQPF45N15V2
150V N-Channel MOSFET
QFET®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for DC to DC converters, sychronous rectification,
and other applications lowest Rds(on) is required.
Features
• 45A, 150V, RDS(on) = 0.04@VGS = 10 V
• Low gate charge ( typical 72 nC)
• Low Crss ( typical 135 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP
GD S
TO-220F
FQPF
G!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
FQP45N15V2 FQPF45N15V2
150
45
45 *
31
31 *
180
180 *
± 30
1124
45
22
4.5
220
66
1.47
0.44
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP45N15V2
0.68
0.5
62.5
FQPF45N15V2
2.25
--
62.5
Units
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
 

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