FQP60N03L View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQP60N03L Datasheet PDF : 8 Pages
| |||
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
IVDG=S =2500Vμ
A
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
103
Operation in This Area
is Limited by R DS(on)
100 µs
102
1 ms
10 ms
DC
101
100
10-1
※ Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
100
101
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
※ Notes :
1. VGS = 10 V
2. ID = 30 A
0.0
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
T , Case Temperature [℃]
C
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D =0 .5
0 .2
1 0 -1
0 .1
0.0 5
0.0 2
0.0 1
sin g le p u ls e
※ Notes :
1. Zθ
(t)
JC
=
1.50
℃ /W
Max.
2 . D u t y Fa c t o r , D = t /t
12
3. T
JM
-T =
C
P*
DM
Zθ
(t)
JC
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
|
|
Share Link: 