FQP9N25C View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQP9N25C Datasheet PDF : 10 Pages
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
250 --
ID = 250 µA, Referenced to 25°C -- 0.30
IDSS
Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
2.0
VGS = 10 V, ID = 4.4 A
--
VDS = 40 V, ID = 4.4 A
(Note 4) --
--
0.35
7.0
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 545
-- 115
-- 45.5
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 125 V, ID = 8.8 A,
--
RG = 25 Ω
--
--
(Note 4, 5)
--
VDS = 200 V, ID = 8.8 A,
--
VGS = 10 V
--
(Note 4, 5) --
15
85
90
65
26.5
3.5
13.5
--
--
10
100
100
-100
4.0
0.43
--
710
150
60
40
180
190
140
35
--
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
8.8
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
-- 35.2
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8.8 A
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 8.8 A,
-- 218
--
ns
dIF / dt = 100 A/µs
(Note 4) --
1.58
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.9mH, IAS = 8.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
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