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FQP4N60 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FQP4N60
Fairchild
Fairchild Semiconductor Fairchild
FQP4N60 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Typical Characteristics
VGS
101 Top :
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
 Notes :
1. 250s Pulse Test
2. TC = 25
100
101
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
6
5
VGS = 10V
4
VGS = 20V
3
2
1
 Note : TJ = 25
0
0
2
4
6
8
10
12
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1000
800
600
400
200
C
iss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
 Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
100
10-1
2
150
25
-55
 Notes :
1. VDS = 50V
2. 250s Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
150 25
 Notes :
1. V = 0V
2. 25GS0s Pulse Test
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
VDS = 120V
10
VDS = 300V
VDS = 480V
8
6
4
2
 Note : ID = 4.4 A
0
0
3
6
9
12
15
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, April 2000
 

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