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FQD10N20CTF View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FQD10N20CTF
Fairchild
Fairchild Semiconductor Fairchild
FQD10N20CTF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
200 --
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.28
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.9 A
VDS = 40 V, ID = 3.9 A
2.0 --
-- 0.29
-- 5.6
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 395
--
97
-- 40.5
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 100 V, ID = 9.5 A,
RG = 25 Ω
--
11
--
92
--
70
(Note 4)
--
72
VDS = 160 V, ID = 9.5 A,
--
20
VGS = 10 V
-- 3.1
(Note 4)
--
10.5
--
--
10
100
100
-100
4.0
0.36
--
510
125
53
30
190
150
160
26
--
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.8 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 9.5 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.2mH, IAS = 7.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 9.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
--
--
7.8
A
--
--
31.2
A
--
--
1.5
V
-- 158
--
ns
-- 0.97
--
µC
©2009 Fairchild Semiconductor Corporation
FQD10N20C / FQU10N20C Rev. C1
www.fairchildsemi.com
 

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