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FQA46N15_F109 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FQA46N15_F109
Fairchild
Fairchild Semiconductor Fairchild
FQA46N15_F109 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Package Marking and Ordering Information
Device Marking Device
FQA46N15
FQA46N15
FQA46N15
FQA46N15_F109
Package
TO-3P
TO-3PN
Reel Size
--
--
Tape Width
--
--
Quantity
30
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
150
BVDSS/
TJ
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 150 V, VGS = 0 V
--
VDS = 120 V, TC = 150°C
--
IGSSF
Gate-Body Leakage Current, Forward
VGS = 25 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -25 V, VDS = 0 V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
2.0
VGS = 10 V, ID = 25A
--
VDS = 40 V, ID = 25A (Note 4)
--
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
--
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 75 V, ID = 45.6A,
--
RG = 25
--
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
--
(Note 4, 5)
--
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 120 V, ID = 45.6A,
--
VGS = 10 V
--
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS =50A
--
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 45.6 A,
dIF / dt = 100 A/µs
--
(Note 4)
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.43mH, IAS =50A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 45.6A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ
--
0.16
--
--
--
--
--
0.033
36
2500
520
100
35
320
210
200
85
15
41
--
--
--
130
0.55
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0
V
0.042
--
S
3250 pF
670 pF
130 pF
80
ns
650
ns
430
ns
410
ns
110
nC
--
nC
--
nC
50
A
200
A
1.5
V
--
ns
--
µC
2
FQA46N15 / FQA46N15_F109 Rev. A1
www.fairchildsemi.com
 

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