FLM3742-18F View Datasheet(PDF) - Eudyna Devices Inc
Part Name
Description
Manufacturer
FLM3742-18F Datasheet PDF : 4 Pages
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FLM3742-18F
FEATURES
• High Output Power: P1dB = 43.0dBm (Typ.)
• High Gain: G1dB = 10.5dB (Typ.)
• High PAE: ηadd = 37% (Typ.)
• Low IM3 = -46dBc@Po = 32.0dBm
• Broad Band: 3.7 ~ 4.2GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM3742-18F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Tc = 25°C
83.3
W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.0 and -11.6 mA respectively with
gate resistance of 25Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
ηadd
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 4800mA
VDS = 5V, IDS = 480mA
IGS = -480µA
VDS =10V,
IDS = 0.55 IDSS (Typ.),
f = 3.7 ~ 4.2 GHz,
ZS=ZL= 50 ohm
Min.
-
-
-1.0
-5.0
42.0
9.5
-
-
Limit
Typ. Max.
9.0 13.5
4000 -
-2.0 -3.5
-
-
43.0 -
10.5 -
4800 6000
37 -
Unit
A
mS
V
V
dBm
dB
mA
%
Gain Flatness
∆G
-
- ±0.6
dB
3rd Order Intermodulation
Distortion
f = 4.2 GHz, ∆f = 10 MHz
IM3 2-Tone Test
-44 -46 -
dBc
Pout = 32.0dBm S.C.L.
Thermal Resistance
Rth Channel to Case
- 1.6 1.8
°C/W
Channel Temperature Rise
CASE STYLE: IK
∆Tch
10V x Idsr x Rth
-
- 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.3
August 2004
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