FFP08S60S View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FFP08S60S Datasheet PDF : 5 Pages
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FFP08S60S
Features
• High Speed Switching, trr < 30ns @ IF=8A
• High Reverse Voltage and High Reliability
• RoHS component
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
October 2007
STEALTHTM II Rectifier
tm
8A, 600V STEALTHTM II Rectifier
The FFP08S60S is STEALTHTM II rectifier with soft recovery
characteristics. It is silicon nitride passivated ion-implanted epi-
taxial planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching cir-
cuits reducing power loss in the switching transistors.
Pin Assignments
TO-220-2L
1. Cathode 2. Anode
1
1. Cathode
2
2. Anode
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
TJ, TSTG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 115 °C
Operating Junction and Storage Temperature
Thermal Characteristics
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction to Case
Package Marking and Ordering Information
Device Marking Device
F08S60S
FFP08S60STU
Package
TO-220-2L
Reel Size
-
Value
600
600
600
8
80
- 65 to +150
Max
2.5
Tape Width
-
Units
V
V
V
A
A
°C
Units
°C/W
Quantity
50
©2006 Fairchild Semiconductor Corporation
1
FFP08S60S Rev. B
www.fairchildsemi.com
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