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FFA60UP30DN View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FFA60UP30DN
Fairchild
Fairchild Semiconductor Fairchild
FFA60UP30DN Datasheet PDF : 0 Pages
Electrical Characteristics (per diode) Ta = 25°C unless otherwise noted
Symbol
Parameter
VF *
IR *
trr
ta
tb
Qrr
WAVL
IF = 30 A
IF = 30 A
VR = 300 V
VR = 300 V
IF =1 A, diF/dt = 100 A/µs, VR = 30 V
IF =30 A, diF/dt = 200 A/µs, VR = 195 V
IF =30 A, diF/dt = 200 A/µs, VR = 195 V
Avalanche Energy (L = 20 mH)
TC = 25 °C
TC = 150 °C
TC = 25 °C
TC = 150 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
*Pulse Test: Pulse Width=300 µs, Duty Cycle=2%
Min.
-
-
-
-
-
-
-
-
-
20
Typ.
-
-
-
-
-
-
17
15
50
-
Max.
1.5
1.3
100
500
45
55
-
-
-
-
Unit
V
V
µA
µA
ns
ns
ns
ns
nC
mJ
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
©2005 Fairchild Semiconductor Corporation
FFA60UP30DN Rev.C1
2
www.fairchildsemi.com
 

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