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FDS8882 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDS8882 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Typical Characteristics TJ = 25 °C unless otherwise noted
21
18
15
12
9
6
3
0
0
VGS = 10 V
VGS = 6 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
3.0
VGS = 3 V
2.5
2.0
VGS = 3.5 V
1.5
VGS = 6 V
VGS = 4.5 V
1.0
0.5
0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
3
6
9 12 15 18 21
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 9 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
50
40
30
20
TJ = 25 oC
10
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
ID = 9 A
TJ = 125 oC
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
21
PULSE DURATION = 80 µs
18 DUTY CYCLE = 0.5% MAX
VDS = 5 V
15
12
9
TJ = 150 oC
6
TJ = 25 oC
3
TJ = -55 oC
0
0
1
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
30
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
3
FDS8882 Rev.C
www.fairchildsemi.com
 

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