FDS8638 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDS8638 Datasheet PDF : 6 Pages
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Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
40
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 32 V, VGS = 0 V
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = 250 µA
1.0
ID = 250 µA, referenced to 25 °C
VGS = 10 V, ID = 18 A
VGS = 4.5 V, ID = 16 A
VGS = 10 V, ID = 18 A, TJ = 125 °C
VDS = 5 V, ID = 18 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 20 V, ID = 18 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
VDD = 20 V,
ID = 18 A
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 18 A
VGS = 0 V, IS = 2.1 A
(Note 2)
(Note 2)
IF = 18 A, di/dt = 100 A/µs
Typ
32
1.9
-7
3.3
4.0
4.8
88
4270
1175
120
0.9
16
6
39
5
61
27
12
7.2
0.81
0.71
51
30
Max Units
1
±100
V
mV/°C
µA
nA
3.0
V
mV/°C
4.3
5.4
mΩ
6.3
S
5680 pF
1560 pF
180
pF
Ω
30
ns
13
ns
63
ns
10
ns
86
nC
39
nC
nC
nC
1.3
V
1.2
82
ns
49
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 3 mH, IAS = 19 A, VDD = 40 V, VGS = 10 V.
©2009 Fairchild Semiconductor Corporation
2
FDS8638 Rev.C
www.fairchildsemi.com
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