FDS6994S View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDS6994S Datasheet PDF : 9 Pages
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Typical Characteristics for Q2
10
ID =8.2A
8
6
VDS = 10V
15V
20V
4
2
0
0
10
20
30
40
50
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 10V
0.1 SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
1ms
10ms
100ms
1s
10s
DC
100µs
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
4000
3000
2000
f = 1MHz
VGS = 0 V
Ciss
1000
0
0
Crss
Coss
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 135°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
RθJA(t) = r(t) * RθJA
RθJA = 135 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
100
1000
FDS6994S Rev C2(W)
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