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FDS6990 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDS6990 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDS6990S.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
0.01
125oC
0.001
0.0001
25oC
0V
0.00001
0
10
20
30
VDS, REVERSE VOLTAGE (V)
10ns/div
Figure 12. FDS6990S SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6990A).
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
0V
10ns/div
Figure 13. Non-SyncFET (FDS6990A) body
diode reverse recovery characteristic.
FDS6990S Rev B (W)
 

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