Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
âBVDSS
âTJ
IDSS
DrainâSource Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
GateâBody Leakage, Forward
IGSSR
GateâBody Leakage, Reverse
VGS = 0 V, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VDS = 24 V,
VGS = 20 V,
VGS = â20 V
VGS = 0 V
VDS = 0 V
VDS = 0 V
30
V
23
mV/°C
500
ÂľA
100
nA
â100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
âVGS(th)
âTJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static DrainâSource
OnâResistance
ID(on)
OnâState Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 1 mA
ID = 1 mA, Referenced to 25°C
1
2.2
3
V
â6
mV/°C
VGS = 10 V, ID = 7.5 A
17.5 22
mâŚ
VGS = 10 V, ID = 7.5 A, TJ =125°C
VGS = 4.5 V, ID = 6.5 A
27
35
24
30
VGS = 10 V,
VDS = 5 V
20
A
VDS = 15 V,
ID = 10 A
22
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1233
pF
344
pF
106
pF
Switching Characteristics
td(on)
TurnâOn Delay Time
tr
TurnâOn Rise Time
td(off)
TurnâOff Delay Time
tf
TurnâOff Fall Time
Qg
Total Gate Charge
Qg s
GateâSource Charge
Qgd
GateâDrain Charge
(Note 2)
VDS = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 âŚ
VDS = 15 V,
VGS = 5 V
ID = 10 A,
8
16
ns
5
10
ns
25
40
ns
11
20
ns
11
16
nC
5
nC
4
nC
DrainâSource Diode Characteristics and Maximum Ratings
IS
Maximum Continuous DrainâSource Diode Forward Current
VSD
DrainâSource Diode Forward
Voltage
VGS = 0 V, IS = 2.9 A (Note 2)
2.9
A
0.5 0.7
V
trr
Diode Reverse Recovery Time
IF = 10A
17
nS
Qrr
Diode Reverse Recovery Charge
diF/dt = 300 A/Âľs
(Note 3)
12.5
nC
Notes:
1. RθJA is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b) 125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300Âľs, Duty Cycle < 2.0%
3. See âSyncFET Schottky body diode characteristicsâ below.
FDS6990S Rev B (W)