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FDS6990 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDS6990
Fairchild
Fairchild Semiconductor Fairchild
FDS6990 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VDS = 24 V,
VGS = 20 V,
VGS = –20 V
VGS = 0 V
VDS = 0 V
VDS = 0 V
30
V
23
mV/°C
500
ÂľA
100
nA
–100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 1 mA
ID = 1 mA, Referenced to 25°C
1
2.2
3
V
–6
mV/°C
VGS = 10 V, ID = 7.5 A
17.5 22
mΩ
VGS = 10 V, ID = 7.5 A, TJ =125°C
VGS = 4.5 V, ID = 6.5 A
27
35
24
30
VGS = 10 V,
VDS = 5 V
20
A
VDS = 15 V,
ID = 10 A
22
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1233
pF
344
pF
106
pF
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qg s
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDS = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 15 V,
VGS = 5 V
ID = 10 A,
8
16
ns
5
10
ns
25
40
ns
11
20
ns
11
16
nC
5
nC
4
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 2.9 A (Note 2)
2.9
A
0.5 0.7
V
trr
Diode Reverse Recovery Time
IF = 10A
17
nS
Qrr
Diode Reverse Recovery Charge
diF/dt = 300 A/Âľs
(Note 3)
12.5
nC
Notes:
1. RθJA is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b) 125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300Âľs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
FDS6990S Rev B (W)
 

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