FDS6990 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

FDS6990

Dual 30V N-Channel PowerTrench® SyncFET™

Fairchild Semiconductor 

May 2001

FDS6990S

Dual 30V N-Channel PowerTrench® SyncFET™

General Description

The FDS6990S is designed to replace a dual SO-8

MOSFET and two Schottky diodes in synchronous

DC:DC power supplies. This 30V MOSFET is designed

to maximize power conversion efficiency, providing a

low RDS(ON) and low gate charge. Each MOSFET

includes integrated Schottky diodes using Fairchild’s

monolithic SyncFET technology. The performance of

the FDS6990S as the low-side switch in a synchronous

rectifier is similar to the performance of the FDS6990A

in parallel with a Schottky diode.

Applications

• DC/DC converter

• Motor drives

Features

• 7.5A, 30 V.

RDS(ON) = 22 mΩ @ VGS = 10 V

RDS(ON) = 30 mΩ @ VGS = 4.5 V

• Includes SyncFET Schottky diode

• Low gate charge (11 nC typical)

• High performance trench technology for extremely low

RDS(ON)

• High power and current handling capability

DD1

DD1

DD2

DD2

SO-8

Pin 1 SO-8

SS2GS2SS1GG1

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

VDSS

VGSS

ID

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

PD

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS6990S

FDS6990S

13’’

©2001 Fairchild Semiconductor Corporation

5

Q1

6

7

Q2

8

Ratings

30

±20

7.5

20

2

1.6

1

0.9

–55 to +150

78

40

Tape width

12mm

4

3

2

1

Units

V

V

A

W

°C

°C/W

°C/W

Quantity

2500 units

FDS6990S Rev B(W)

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