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FDS6986S View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDS6986S Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Typical Characteristics Q1
10
ID = 6.5A
8
6
4
VDS = 5V
10V
15V
2
0
0
3
6
9
12
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
100
100µs
10
RDS(ON) LIMIT
1
VGS = 10V
0.1 SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
1000
800
600
400
CISS
f = 1MHz
VGS = 0 V
200
CRSS
COSS
0
0
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 135°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 20. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) + RθJA
RθJA = 135 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6986S Rev C1 (W)
 

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