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FDS6670AS_NL View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDS6670AS_NL
Fairchild
Fairchild Semiconductor Fairchild
FDS6670AS_NL Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
March 2005
FDS6670AS
30V N-Channel PowerTrench® SyncFET™
General Description
The FDS6670AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6670AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
• DC/DC converter
• Low side notebook
Features
• 13.5 A, 30 V. RDS(ON) max= 9.0 mΩ @ VGS = 10 V
RDS(ON) max= 11.5 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (27nC typical)
• High performance trench technology for extremely low
RDS(ON) and fast switching
• High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6670AS
FDS6670AS
13’’
FDS6670AS
FDS6670AS_NL (Note 4)
13’’
©2005 Fairchild Semiconductor Corporation
5
6
7
8
Ratings
30
±20
13.5
50
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2500 units
FDS6670AS Rev A (X)
 

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