FDS6681Z View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDS6681Z Datasheet PDF : 6 Pages
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Typical Characteristics
10
ID = -20A
8
6
VDS = -10V
-20V
4
-15V
2
0
0
40
80
120
160
200
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100 RDS(ON) LIMIT
10
1
100us
1ms
10ms
100ms
1s
10s
DC
VGS = -10V
0.1
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.01
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
10000
8000
6000
f = 1MHz
VGS = 0 V
Ciss
4000
2000
Crss
Coss
0
0
5
10
15
20
25
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 125°C/W
40
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) * RJA
RθJA = 125 °C/W
P(pk
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6681Z Rev B (W)
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