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FDS6680AS View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDS6680AS
Fairchild
Fairchild Semiconductor Fairchild
FDS6680AS Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
Trr
Diode Reverse Recovery Time
VGS = 0 V,
VGS = 0 V,
IF = 11.5A,
IS = 3.5 A
IS = 7 A
(Note 2)
(Note 2)
Qrr
Diode Reverse Recovery Charge
diF/dt = 300 A/µs
(Note 3)
3.5
A
0.5
0.7
V
0.6
18
nS
12
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
4. FDS6680AS_NL is a lead free product. The FDS6680AS_NL marking will appear on the reel label.
FDS6680AS Rev B(X)
 

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