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FDS6675BZ View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDS6675BZ Datasheet PDF : 6 Pages
1 2 3 4 5 6
Typical Characteristics TJ = 25°C unless otherwise noted
60
VGS = - 10V
50
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = - 5V
VGS = - 4.5V
VGS = - 4V
30
20
VGS = - 3.5V
10
VGS = - 3V
0
0
1
2
3
4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
4.0
PULSE DURATION = 80µs
3.5
VGS = -3.5V DUTY CYCLE = 0.5%MAX
3.0
2.5
VGS = - 4V
VGS = - 4.5V
2.0
1.5
1.0
0.5
0
VGS = - 5V
VGS = - 10V
10
20
30
40
50
60
-ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
1.6
ID = -11A
1.4 VGS = -10V
1.2
1.0
0.8
0.6
-80
-40
0
40
80 120 160
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance vs Junction
Temperature
50
ID = -11A PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
30
TJ = 150oC
20
10
TJ = 25oC
0
3.0
4.5
6.0
7.5
9.0 10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to Source
Voltage
60
PULSE DURATION = 80µs
50 DUTY CYCLE = 0.5%MAX
40
30
20
10
0
2.0
TJ = 150oC
TJ = 25oC
TJ = -55oC
2.5
3.0
3.5
4.0
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
VGS = 0V
10
TJ = 150oC
1
0.1
0.01
TJ = 25oC
TJ = -55oC
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
FDS6675BZ Rev. B1
3
www.fairchildsemi.com
 

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