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FDS6630A View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDS6630A
Fairchild
Fairchild Semiconductor Fairchild
FDS6630A Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
April 1999
FDS6630A
N-Channel Logic Level PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
DC/DC converter
Load switch
Motor drives
Features
6.5 A, 30 V. RDS(on) = 0.038 @ VGS = 10 V
RDS(on) = 0.053 @ VGS = 4.5 V
Low gate charge (5nC typical).
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
D
D
D
D
5
4
6
3
SO-8
S pin 1
G
S
S
7
2
8
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current - Continuous
(Note 1a)
6.5
A
- Pulsed
40
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
°C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDS6630A
FDS6630A
13’’
Tape Width
12mm
Quantity
2500 units
©1999 Fairchild Semiconductor Corporation
FDS6630A Rev. C1
 

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