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FDS6162N7 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDS6162N7
Fairchild
Fairchild Semiconductor Fairchild
FDS6162N7 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Typical Characteristics
5
ID = 23 A
4
3
2
1
0
0
10
VDS = 5V
10V
15V
20
30
40
50
60
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100
RDS(ON) LIMIT
10
1
VGS = 10V
SINGLE PULSE
RθJA = 85oC/W
0.1
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
8000
6000
CISS
4000
f = 1MHz
VGS = 0 V
2000
COSS
CRSS
0
0
5
10
15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.01
0.1
SINGLE PULSE
RθJA = 85°C/W
TA = 25°C
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1.00
0.10
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.00
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 85 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDS6162N7 Rev C2 (W)
 

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