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FDS4935BZ View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDS4935BZ
Fairchild
Fairchild Semiconductor Fairchild
FDS4935BZ Datasheet PDF : 5 Pages
1 2 3 4 5
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
VGS = 0 V, ID = –250 PA
–30
ID = –250 PA,Referenced to 25qC
VDS = –24 V, VGS = 0 V
VGS = +25 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
'VGS(th)
'TJ
rDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
VDS = VGS, ID = –250 PA
–1
ID = –250 PA,Referenced to 25qC
VGS = –10 V, ID = –6.9 A
VGS = –4.5 V, ID = –5.3 A
VGS = –10 V, ID = –6.9A,TJ=125qC
VDS = –5 V, ID = –6.9 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg(TOT)
Total Gate Charge, VGS = 10V
Qg(TOT)
Total Gate Charge, VGS = 5V
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 :
VDS = –15 V, ID = –6.9 A,
VGS = –10 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –2.1 A (Note 2)
tRR
Reverse Recovery Time
QRR
Reverse Recovery Charge
IF = –8.8 A,
diF/dt = 100 A/µs
(Note 2)
24
–1.9
–5
18
27.5
26
22
1360
240
200
12
13
68
38
29
16
4
7
–0.8
24
9
–1
+10
–3
22
35
34
22
23
108
61
40
23
–2.1
–1.2
V
mV/qC
PA
PA
V
mV/qC
m:
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
A
V
ns
nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design.
a) 78°C/W steady state
when mounted on a
1in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDS4935BZ Rev B1 (W)
 

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