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FDS4935BZ View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDS4935BZ
Fairchild
Fairchild Semiconductor Fairchild
FDS4935BZ Datasheet PDF : 5 Pages
1 2 3 4 5
September 2006
tm
FDS4935BZ
Dual 30 Volt P-Channel PowerTrench“ MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
x –6.9 A, –30 V. RDS(ON) = 22 m: @ VGS = –10 V
RDS(ON) = 35 m: @ VGS = – 4.5 V
x Extended VGSS range (–25V) for battery applications
x ESD protection diode (note 3)
x High performance trench technology for extremely
low RDS(ON)
x High power and current handling capability
DD1
DD1
DD2
DD2
SO-8
Pin 1 SO-8
SS2GS2SS1GG1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDS\
VGS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RTJA
Thermal Resistance, Junction-to-Ambient
RTJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4935BZ
FDS4935BZ
13’’
”2006 Fairchild Semiconductor Corporation
5
4
6
Q1
3
7
2
Q2
8
1
Ratings
–30
+25
–6.9
–50
1.6
1.0
0.9
–55 to +150
78
40
Units
V
V
A
W
qC
qC/W
qC/W
Tape width
12mm
Quantity
2500 units
FDS4935BZ Rev B1 (W)
 

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