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FDN338P View Datasheet(PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

Part Name
Description
Manufacturer
FDN338P
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.  HTSEMI
FDN338P Datasheet PDF : 4 Pages
1 2 3 4
20V P-Channel Enhancement Mode MOSFET
FDN338P
VDS= -20V
RDS(ON), Vgs@-4.5V, Ids@-1.6A= 115m
RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155m
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
SOT-23(PACKAGE)
G
S
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90
1.00
0.10
0.40
0.85
REF.
1.30
0.20
-
1.15
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation
2)
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
Junction-to-Ambient Thermal Resistance (PCB mounted) 3)
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RthJA
Limit
-20
±8
-1.6
-5
0.5
-55 to 150
100
166
Unit
V
A
W
oC
oC/W
Notes
1) Pulse width limited by maximum junction temperature.
2) Surface Mounted on FR4 Board, t v 5 sec.
3) Surface Mounted on FR4 Board.
1 
JinYu
semiconductor
www.htsemi.com
Date:2011/05
 

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