FDN5618PT/RNL View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDN5618PT/RNL Datasheet PDF : 5 Pages
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Typical Characteristics
5
VGS = -10V
-6.0V
4 -4.5V
-4.0V
-3.5V
-3.0V
3
2
1
-2.5V
0
0
1
2
3
4
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.3
ID = -1.25A
VGS = -10V
1.2
1.1
1
0.9
0.8
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature.
6
VDS = - 5V
5
4
TA = 125oC
25oC
-55oC
3
2
1
0
1
1.5
2
2.5
3
3.5
4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
VGS = -3.0V
-3.5V
-4.0V
-4.5V
-6.0V
-10V
1
2
3
4
5
-ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
ID = -0.65 A
0.5
0.4
TA = 125oC
0.3
0.2
TA = 25oC
0.1
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
TA = 125oC
0.1
0.01
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN5618P Rev C(W)
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