DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

FDG6308P View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDG6308P
Fairchild
Fairchild Semiconductor Fairchild
FDG6308P Datasheet PDF : 5 Pages
1 2 3 4 5
October 2000
PRELIMINARY
FDG6308P
P-Channel 1.8V Specified PowerTrenchMOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Battery management
Load switch
Features
–0.6 A, –20 V.
RDS(ON) = 0.40 @ VGS = –4.5 V
RDS(ON) = 0.55 @ VGS = –2.5 V
RDS(ON) = 0.80 @ VGS = –1.8 V
Low gate charge
High performance trench technology for extremely
low RDS(ON)
Compact industry standard SC70-6 surface mount
package
S
G
D
S 1 or 4
Pin 1
D
G
S
G 2 or 5
D 3 or 6
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
6 or 3 D
5 or 2 G
4 or 1 S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.08
FDG6308P
7’’
Ratings
–20
±8
–0.6
–1.8
0.3
–55 to +150
415
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDG6308P Rev B(W)
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]