FCP7N60N View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FCP7N60N Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
30
VGS = 15.0 V
10.0 V
6.0 V
4.5 V
10
4.0 V
*Notes:
1. 250μs Pulse Test
1
2. TC = 25oC
0.5
0.1
1
10
30
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.0
0.8
0.6
VGS = 10V
VGS = 20V
0.4
0.2
0
*Note: TC = 25oC
4
8
12
16
20
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
10000
1000
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
100
Coss
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss
Crss = Cgd
1
0.1
1
10
100
600
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
60
10
1
0.2
2
150oC
-55oC
25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
4
6
8
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
10
150oC
25oC
1
0.1
0.4
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
8
VDS = 120V
VDS = 380V
VDS = 480V
6
4
2
*Note: ID = 3.4A
0
0
3
6
9
12 15 18
Qg, Total Gate Charge [nC]
©2009 Fairchild Semiconductor Corporation
FCP7N60N / FCPF7N60NT Rev. C0
3
www.fairchildsemi.com
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